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128Mb: x16 Mobile SDRAM
Operation
Figure 23:
PRECHARGE Command
C LK
C KE
HI G H
CS #
RA S #
C A S #
WE#
A0–A9, A11
All Banks
A10
Bank S ele c te d
BA0, BA1
BANK
ADDRE SS
VALID ADDRE SS
DON ’ T C ARE
Power-Down
Power-down occurs if CKE is registered LOW coincident with a NOP or COMMAND
INHIBIT when no accesses are in progress. If power-down occurs when all banks are
idle, this mode is referred to as precharge power-down; if power-down occurs when
there is a row active in any bank, this mode is referred to as active power-down. Entering
power-down deactivates the input and output buffers, excluding CKE, for maximum
power savings while in standby. The device must not remain in the power-down state
longer than the refresh period (64ms) since no refresh operations are performed in this
mode.
The power-down state is exited by registering a NOP or COMMAND INHIBIT and CKE
HIGH at the desired clock edge (meeting t CKS). See Figure 24 on page 28.
Figure 24:
Power-Down
C LK
C KE
t C K S
( (
) )
( (
) )
( (
) )
> t C K S
C OMMAND
NOP
( (
) )
( (
) )
NOP
A C TIVE
All b anks i d le
Input b uffers g ate d off
tR C D
tRA S
Enter power- d own mo d e.
Exit power- d own mo d e.
tR C
DON ’ T C ARE
PDF: 09005aef8237e877/Source: 09005aef8237e8d8
128Mb_x16 Mobile SDRAM_Y25M_2.fm - Rev. C 2/07 EN
28
Micron Technology, Inc., reserves the right to change products or specifications without notice.
?2006 Micron Technology, Inc. All rights reserved.
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相关代理商/技术参数
MT48H8M16LFB4-8
制造商:Micron Technology Inc 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA
MT48H8M16LFB4-8 IT
制造商:Micron Technology Inc 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA
MT48H8M16LFB4-8 IT TR
功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘